IRGS30B60 International Rectifier, IRGS30B60 Datasheet - Page 2

• Manufacturer Part Number: IRGS30B60
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
L
C
C
C
RBSOA
SCSOA
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC
IRGB/S/SL30B60K
2
Note 
E
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
(Peak)
/∆T
/∆T
J
to
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
…
are on page 13
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
1000
1830
1175
1150
1785
1750
0.40
1.95
2.40
102
200
350
825
185
635
205
160
-10
2.6
4.5
5.0
7.5
—
18
—
14
44
46
28
31
46
28
32
60
—
2000
3000
1575
1085
1350
2435
2500
2.35
2.75
2.95
±100
250
153
620
955
200
235
255
5.5
21
66
60
39
40
60
39
42
90
—
—
—
—
—
—
—
mV/°C V
V/°C V
nC V
nH Measured 5mm from package
µA
nA
pF
µJ
ns
µJ
ns
µs
V
V
V
S
A
V
I
I
I
V
V
V
V
V
V
I
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
T
V
T
V
f = 1.0MHz
C
C
C
C
C
C
C
C
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
= 30A, V
= 30A, V
= 30A, V
= 30A
= 30A, V
= 30A, V
= 30A, V
= 30A, V
= 25°C
= 25°C
= 150°C
= 150°C
= 150°C, I
= 150°C, Vp = 600V, R
=500V,V
=360V,V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
Conditions
= 15V
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
CE
C
GE
GE
= 500µA
= 1mA (25°C-150°C)
C
G
G
G
G
Conditions
= 250µA
= 1.0mA (25°C-150°C)
= 15V, T
= 15V, T
= 15V, T
= 50A, PW = 80µs
= 400V
= 400V
= 400V
= 400V
CE
= 600V
= 600V, T
= 600V, T
= 120A, Vp = 600V
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= +15V to 0V,R
= +15V to 0V
= 0V
J
J
J
= 25°C
= 150°C
= 175°C
J
J
G
= 150°C
= 175°C
www.irf.com
= 10Ω
G
=10Ω
Ref.Fig.
Ref.Fig.
WF1,WF2
8,9,10
8,9,10
12,14
13,15
5,6,7
WF1
WF2
WF3
WF3
CT1
CT4
CT4
CT4
CT4
CT2
CT3
11
17
16
4