IRGS30B60 International Rectifier, IRGS30B60 Datasheet - Page 7

• Manufacturer Part Number: IRGS30B60
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

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0.0001
10000
0.001
1000
0.01
100
0.1
10
10
1
1E-006
0
Fig. 16- Typ. Capacitance vs. V
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
D = 0.50
0.02
0.05
0.01
0.10
0.20
20
V
GE
= 0V; f = 1MHz
1E-005
40
V CE (V)
SINGLE PULSE
( THERMAL RESPONSE )
60
Cres
Coes
Cies
0.0001
t 1 , Rectangular Pulse Duration (sec)
80
CE
100
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
16
14
12
10
8
6
4
2
0
i/Ri
IRGB/S/SL30B60K
Fig. 17 - Typical Gate Charge vs. V
R
0
1
R
1
τ
2
τ
R
0.01
2
2
R
25
Q G , Total Gate Charge (nC)
I
2
CE
τ
C
= 30A; L = 600µH
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
50
Ri (°C/W)
0.200
0.209
200V
0.1
75
400V
0.000428
0.013031
τi (sec)
100
GE
125
1
7