IXTM75N100 IXYS Corporation, IXTM75N100 Datasheet
IXTM75N100
Manufacturer Part Number
IXTM75N100
Description
1000V HiPerFET power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXTM75N100.pdf
(4 pages)
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
GSS
D25
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
V
J
J
C
C
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
= 250 A
D
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
67N10
75N10
J
J
(T
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 67N10
IXTH / IXTM 75N10
67N10
75N10
67N10
75N10
TO-204 = 18 g, TO-247 = 6 g
min.
100
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
100
100
268
300
300
150
300
20
30
67
75
0.025
0.020
max.
100
200
4
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AE (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
100 V
100 V
V
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
67 A 25 m
75 A 20 m
I
D25
TM
G
process
91533E(5/96)
R
D (TAB)
DS(on)
1 - 4
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IXTM75N100 Summary of contents
Page 1
TM MegaMOS FET N-Channel Enhancement Mode Symbol Test Conditions 150 C DSS 150 C; R DGR J V Continuous GS V Transient GSM ...
Page 2
... C, unless otherwise specified) J min. typ. max. 67N10 75N10 67N10 75N10 JM = 100 V 300 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXTH 67N10 IXTH 75N10 IXTM 67N10 IXTM 75N10 TO-247 AD (IXTH) Outline ...
Page 3
Fig. 1 Output Characteristics 200 T = 25°C J 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 Volts DS Fig vs. Drain Current DS(on) 1 25°C J ...
Page 4
Fig.7 Gate Charge Characteristic Curve 50V 37. 1mA 100 125 150 175 200 Gate Charge - ...