IXTM75N100 IXYS Corporation, IXTM75N100 Datasheet - Page 3

• Manufacturer Part Number: IXTM75N100
• Description: 1000V HiPerFET power MOSFET
• Manufacturer: IXYS Corporation

© 2000 IXYS All rights reserved
200
150
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
50
80
60
40
20
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-50
0
T
J
T
= 25°C
-25
20
J
= 25°C
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
40
0
75N10
67N10
T
60
Case Temperature
25
I
C
D
V
DS(on)
- Degrees C
- Amperes
DS
80
50
- Volts
vs. Drain Current
V
GS
100 120 140 160
75
= 10V
V
GS
100 125 150
V
= 15V
GS
= 10V
8V
9V
6V
5V
7V
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
125
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
75
50
25
0
-50
-50
0
IXTH 67N10
IXTM 67N10
1
-25
-25
V
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
GS(th)
2
0
0
3
T
T
T
of Drain to Source Resistance
J
Breakdown and Threshold Voltage
25
25
J
J
= 125°C
V
4
- Degrees C
- Degrees C
I
GS
D
= 37.5A
50
50
- Volts
5
6
75
75
T
IXTH 75N10
IXTM 75N10
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10
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