GSD965A E-Tech Electronics LTD, GSD965A Datasheet
GSD965A
Manufacturer Part Number
GSD965A
Description
Npn Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GSD965A.pdf
(2 pages)
G
Description
The GSD965A is designed for use as AF output amplifier and flash unit.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Junction Temperature
Storage Temperature
Total Power Dissipation at Ta = 25 :
Characteristics at Ta = 25
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Classification Of hFE1
G
S
S
Symbol
Range
S E A T IN G
P L A N E
Rank
D
D
9
9
6
6
5
5
e 1
b 1
D
e
A
A
Min.
230
150
40
30
7
-
-
-
-
-
230-380
b
Q
N
N
E
P
P
S 1
Typ.
0.35
150
C
-
-
-
-
-
-
-
-
N
N
E
E
340-600
P
P
BVCBO
BVCEO
BVEBO
I
I
R
Tstg
T
T
PD
IC
IC
Tj
Max.
A
A
800
0.1
0.1
50
1
-
-
-
-
-
X
X
TO-92
I
I
CORPORATION
A
A
L
L
P
P
Unit
MHz
560-800
L
L
uA
uA
pF
V
V
V
V
A
A
S
N
N
A
A
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
REF.
R
R
S
b
C
-55 ~ +150
A
b
1
1
+150
0.75
T
T
7.0
40
30
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
5
8
R
R
A
A
Min.
4.45
1.02
0.36
0.36
0.36
Millimeter
N
N
S
S
I
I
S
S
Max.
0.51
0.76
0.51
Test Conditions
4.7
T
T
-
O
O
R
R
REF.
ISSUED DATE :2005/02/04
REVISED DATE :
e1
D
E
L
e
Min.
12.70
1.150
4.44
3.30
2.42
W
V
V
V
A
A
Millimeter
Max.
1.390
3.81
2.66
4.7
1/2
-
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GSD965A Summary of contents
Page 1
... Description The GSD965A is designed for use as AF output amplifier and flash unit. Package Dimensions Absolute Maximum Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage ...
Page 2
Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not ...