GSD1857 E-Tech Electronics LTD, GSD1857 Datasheet
GSD1857
Manufacturer Part Number
GSD1857
Description
Npn Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GSD1857.pdf
(1 pages)
G
POWER TRANSISTOR
FEATURES
*High breakdown voltage. ( BV
*Low collector output capacitance. (Type.20pF at V
*High transition frequency. (fT=80MHz)
Package Dimensions
Absolute Maximum Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
Electrical Characteristics
Classification Of hFE1
Head Office And Factory:
GSD1857
G
Important Notice:
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
S
S
*V
Symbol
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
BV
BV
BV
I
I
Cob
CE(sat)
h
S E A T IN G
CBO
EBO
P L A N E
fT
D
FE
D
CBO
CEO
EBO
Range
Rank
1
1
8
8
Parameter
5
5
e 1
b 1
D
e
Min.
7
7
120
120
82
5
-
-
-
-
-
b
N
N
CEO
E
Typ.
P
P
S 1
80
20
(Ta = 25 : : : : )
C
-
-
-
-
-
-
=120V)
N
N
82-180
(Ta = 25 : : : : )
P
E
E
P
P
.
TO-92
I
I
Max.
T
T
400
390
1
1
-
-
-
-
-
V
V
V
A
Ts
A
I
P
CBO
CEO
EBO
I
Tj
CP
C
TG
X
D
X
I
I
CB
A
A
=10V)
L
L
P
P
Unit
MHz
mV
uA
uA
pF
V
V
V
L
L
A
A
120-270
N
N
REF.
Q
S
A
b
A
A
C
b
-55 ~ +150
1
1
I
I
I
V
V
l
V
VCE=5V,IE=100mA, f=30MHz
VCB=10V, IE=0A,f=1MHz
R
R
Ratings
C
C
C
E
+150
CB
BE
CE
=50uA
=1A,I
=50uA
=1mA
120
120
5
2
3
1
Min.
=4V
=100V
=5V,I
T
T
4.45
1.02
0.36
0.36
0.36
Millimeter
R
R
B
=100mA
C
A
A
=0.1A
Max.
N
0.51
0.76
0.51
N
4.7
-
S
S
Test Conditions
I
I
REF.
S
S
*Measured using pulse current.
e1
D
E
L
e
T
T
ISSUED DATE :2003/10/22
REVISED DATE :2004/11/29B
O
O
Min.
R
R
12.70
1.150
4.44
3.30
2.42
180-390
Millimeter
R
Unit
Page: 1/1
Max.
W
1.390
V
V
V
A
A
3.81
2.66
4.7
-
Related parts for GSD1857
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Gs Series Surface Mount Power Inductors
Manufacturer:
ICE Components
Datasheet:
Part Number:
Description:
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Bias Resistor Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Monolithic Dual Switching Diode
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Pnp Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Npn Epitaxial Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
Part Number:
Description:
Pnp Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet: