PUMF12 NXP Semiconductors, PUMF12 Datasheet - Page 3

• Manufacturer Part Number: PUMF12
• Description: Pnp General Purpose Transistor; Npn Resistor-equipped Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Nov 07
Per transistor
P
T
T
T
TR1 (PNP)
V
V
V
I
I
TR2 (NPN)
V
V
V
V
I
I
Per device
P
R
C
CM
O
CM
SYMBOL
SYMBOL
stg
j
amb
tot
CBO
CEO
EBO
CBO
CEO
EBO
i
tot
th j-a
PNP general purpose transistor;
NPN resistor-equipped transistor
total power dissipation
storage temperature range
junction temperature
operating ambient temperature
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
thermal resistance from junction to ambient
positive
negative
PARAMETER
PARAMETER
3
T
open emitter
open base
open collector
open emitter
open base
open collector
T
note 1
amb
amb
CONDITIONS
CONDITIONS
25 C; note 1
25 C; note 1
65
65
MIN.
VALUE
416
Product specification
200
+150
150
+150
50
50
10
+40
100
100
300
50
40
5
100
200
10
MAX.
PUMF12
UNIT
K/W
mW
V
V
V
mA
mA
V
V
V
V
V
mA
mA
mW
C
C
C
UNIT