PUMZ1 NXP Semiconductors, PUMZ1 Datasheet - Page 4

• Manufacturer Part Number: PUMZ1
• Description: Npn/pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Oct 15
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
c
NPN/PNP general purpose transistors
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
TR1
TR2
300 s;
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0 A; V
= 0 A; V
= i
= 0 A; V
= 1 mA; V
= 50 mA; I
= 2 mA; V
e
= 0 A; V
4
CB
CB
EB
CONDITIONS
CE
CE
B
= 30 V
= 30 V; T
= 4 V
CB
= 5 mA; note 1
= 6 V
= 12 V; f = 100 MHz 100
= 12 V; f = 1 MHz
j
= 150 C
120
MIN.
Product specification
100
10
100
200
1.5
2.2
MAX.
PUMZ1
nA
nA
mV
pF
pF
MHz
A
UNIT