PUML1 NXP Semiconductors, PUML1 Datasheet - Page 5

• Manufacturer Part Number: PUML1
• Description: 50 V, 200 Ma Npn General-purpose Transistor/ 100 Ma Npn Resistor-equipped Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PUML1_DG_1
Product data sheet
Table 7.
T
Symbol Parameter
TR1 (general-purpose transistor)
I
I
h
V
f
C
TR2 (resistor-equipped transistor)
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
EBO
T
CBO
CEO
EBO
amb
FE
FE
CEsat
CEsat
I(off)
I(on)
c
c
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
transition frequency
collector capacitance
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Characteristics
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
Rev. 01 — 14 July 2008
Conditions
V
V
T
V
V
V
I
V
f = 100 MHz
V
f = 100 MHz
V
f = 1 MHz
V
V
V
T
V
V
I
V
V
V
f = 1 MHz
C
C
j
j
CB
CB
EB
CE
CE
CE
CE
CB
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 150 C
= 100 mA; I
= 10 mA; I
= 60 V; I
= 60 V; I
= 5 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 6 V; I
= 10 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
C
C
C
C
C
C
E
E
E
E
C
C
E
B
B
B
= 0 A
= 100 mA
= 10 mA;
= 0 A
= 5 mA
= 100 A
C
B
= i
= i
= 0 A
= 0 A;
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= 2 mA
= 2 mA;
= 10 mA
= 10 mA
e
e
= 0 A;
= 0 A;
Min
-
-
-
90
210
-
100
-
-
-
-
-
-
30
-
-
2.5
7
0.8
-
PUML1/DG
Typ
-
-
-
-
-
-
-
230
-
-
-
-
-
-
-
1.1
1.8
10
1
-
© NXP B.V. 2008. All rights reserved.
Max
10
5
10
-
340
250
-
-
3
100
1
50
400
-
150
0.8
-
13
1.2
2.5
Unit
nA
nA
mV
MHz
MHz
pF
nA
mV
V
V
k
pF
5 of 12
A
A
A
A