PIMT1 NXP Semiconductors, PIMT1 Datasheet - Page 2

• Manufacturer Part Number: PIMT1
• Description: Pnp General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic
package.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2001 Oct 22
PIMT1
Per transistor
V
V
V
I
I
I
P
T
T
T
Per device
P
SYMBOL
C
CM
BM
stg
j
amb
600 mW total power dissipation
Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and required
PCB area
Reduced pick and place costs.
General purpose switching and amplification.
CBO
CEO
EBO
tot
tot
PNP general purpose double transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
PARAMETER
MARKING CODE
M1
open emitter
open base
open collector
T
T
amb
amb
2
25 C; note 1
25 C; note 1
CONDITIONS
PINNING
Fig.1
PIN
1, 4
2, 5
6, 3
Top view
6
1
Simplified outline (SC74; SOT457) and
symbol.
emitter
base
collector
5
2
4
3
65
65
MAM457
TR1; TR2
TR1; TR2
TR1; TR2
MIN.
DESCRIPTION
TR1
Product specification
300
+150
150
+150
600
6
1
50
40
5
100
200
200
MAX.
5
2
PIMT1
4
3
TR2
V
V
V
mA
mA
mA
mW
mW
C
C
C
UNIT
2
.