BCR08AM Renesas Electronics Corporation., BCR08AM Datasheet - Page 3

• Manufacturer Part Number: BCR08AM
• Description: Low Power Use Planar Passivation Type
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
V
V
V
I
I
V
R
(dv/dt)
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
2. Measurment using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
DRM
RGT I
RGT III
TM
RGT I
RGT III
GD
th (j-c)
Symbol
T
(di/dt)
V
j
D
=125 C
=400V
c
c
=–0.4A/ms
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
10
10
10
MAXIMUM ON-STATE CHARACTERISTICS
–1
7
5
3
2
7
5
3
2
1
0
1.0
Parameter
1.5
T
ON-STATE VOLTAGE (V)
Test conditions
c
= 25 C
2
2
2.0
2
terminal 1.5mm away from the molded case.
2.5
III
III
II
II
4
3.0
T
T
T
T
T
Junction to case
T
j
c
j
j
j
j
=125 C, V
=25 C, V
=25 C, V
=125 C, V
=125 C
=25 C, I
3.5
TM
D
D
DRM
=6V, R
=6V, R
D
4.0
=1.2A, Instantaneous measurement
=1/2V
applied
3
L
L
DRM
=6 , R
=6 , R
Test conditions
G
G
=330
=330
10
MITSUBISHI SEMICONDUCTOR < TRIAC >
9
8
7
6
5
4
3
2
1
0
10
Commutating voltage and current waveforms
RATED SURGE ON-STATE CURRENT
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
0
(dv/dt)c
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
(inductive load)
5 7 10
PLANAR PASSIVATION TYPE
Min.
1
0.1
0.5
—
—
—
—
—
—
—
(di/dt)c
2 3
LOW POWER USE
Limits
Typ.
—
—
—
—
—
—
—
—
—
TIME
TIME
TIME
BCR08AM
V
D
5 7 10
Max.
1.0
2.0
2.0
2.0
—
—
60
5
5
2
Mar. 2002
V/ s
Unit
C/ W
mA
mA
mA
V
V
V
V