BCR08AM Renesas Electronics Corporation., BCR08AM Datasheet - Page 4

• Manufacturer Part Number: BCR08AM
• Description: Low Power Use Planar Passivation Type
• Manufacturer: Renesas Electronics Corporation.

10
10
10
10
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
–1
3
2
7
5
3
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
0
1
0
3
2
1
–60
0
3
–40
V
5 7
JUNCTION TEMPERATURE ( C)
GATE TRIGGER VOLTAGE VS.
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER
GT
0.2
V
JUNCTION TEMPERATURE
GATE CHARACTERISTICS
GM
–20
I
I
10
RGT I
RGT III
GATE CURRENT (mA)
= 6V
1
0.4
0
2 3
DISSIPATION
20
0.6
TYPICAL EXAMPLE
40
5 7
P
G(AV)
0.8
60
0.1W
10
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
I
2
GM
V
=
80
1.0
GD
0.5A
2 3 5 710
P
=
100
GM
= 0.1V
1.2
= 1W
120
140
1.4
3
160
140
120
100
10
10
10
10
10
MITSUBISHI SEMICONDUCTOR < TRIAC >
80
60
40
20
10
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
0
–60
3
2
1
2
1
10
0
–1
ALLOWABLE CASE TEMPERATURE
2
MAXIMUM TRANSIENT THERMAL
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
–40
IMPEDANCE CHARACTERISTICS
0.1
JUNCTION TEMPERATURE ( C)
2
2 3
GATE TRIGGER CURRENT VS.
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
JUNCTION TEMPERATURE
3 5 7
–20
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
0.2
5 7 10
CONDUCTION TIME
(CYCLES AT 60Hz)
0.3
0
10
JUNCTION TO AMBIENT
JUNCTION TO CASE
0.4
0
20
3
PLANAR PASSIVATION TYPE
2 3
2 3 5 7 10
TYPICAL EXAMPLE
0.5
40
5 7
0.6
60
10
0.7
80
LOW POWER USE
4
1
BCR08AM
100
2 3 5
2 3 5 7 10
0.8
120
0.9
710
140
1.0
5
2
Mar. 2002