RN47A1JE TOSHIBA Semiconductor CORPORATION, RN47A1JE Datasheet - Page 3

• Manufacturer Part Number: RN47A1JE
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
V
V
Symbol
Symbol
CE (sat)
CE (sat)
I
I
I
I
CBO
EBO
h
C
CBO
EBO
h
C
R1
R1
f
f
FE
FE
T
ob
T
ob
V
V
V
I
V
V
V
V
V
I
V
V
C
C
CB
EB
CE
CE
CB
CB
EB
CE
CE
CB
= 5 mA, I
= − 5 mA, I
3
= 50 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= − 50 V, I
= − 5 V, I
= − 5 V, I
= − 10 V, I
= − 10 V, I
Test Condition
Test Condition
B
C
C
B
C
C
C
E
E
= 0.25 mA
= 0
= 1 mA
E
C
E
= − 0.25 mA
= 0
= 0, f = 1 MHz
= 0
= 5 mA
= − 1 mA
= 0
= 0, f = 1 MHz
⎯
= − 5 mA
⎯
3.29
3.29
Min
120
Min
120
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
− 0.1
250
200
0.1
4.7
4.7
⎯
⎯
⎯
⎯
⎯
⎯
3
3
RN47A1JE
2004-07-01
− 100
− 100
Max
6.11
Max
− 0.3
6.11
100
100
700
700
0.3
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
k Ω
k Ω
nA
nA
pF
nA
nA
pF
V
V