RN4909FE TOSHIBA Semiconductor CORPORATION, RN4909FE Datasheet - Page 3

• Manufacturer Part Number: RN4909FE
• Description: Toshiba Transistor Silicon Pnp ? Npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Characteristics
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
V
V
V
V
Symbol
Symbol
Symbol
V
V
R1/R2
CE (sat)
CE (sat)
I
I
I
I
I
I (OFF)
I
I (OFF)
C
CBO
CEO
EBO
h
I (ON)
CBO
CEO
EBO
h
I (ON)
C
R1
f
f
FE
FE
T
ob
T
ob
V
V
V
V
I
V
V
V
V
V
V
V
V
I
V
V
V
V
C
C
CB
CE
EB
CE
CE
CE
CE
CB
CB
CE
EB
CE
CE
CE
CE
CB
= −5 mA, I
= 5 mA, I
3
= −50 V, I
= −50 V, I
= −15 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= 50 V, I
= 50 V, I
= 15 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
C
C
E
B
E
= 0.25 mA
C
= 10 mA
= 0.1 mA
E
B
C
C
E
= −0.25 mA
C
= 0
= 0
= 0
= 0, f = 1 MHz
= −10 mA
= −0.1 mA
= 5 mA
= 5 mA
= 0
= 0
= 0
= 0, f = 1 MHz
= −5 mA
⎯
⎯
= −5 mA
−0.167
0.167
−2.2
−1.5
32.9
1.92
Min
Min
Min
2.2
1.5
70
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
Typ.
Typ.
2.14
200
250
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
47
3
3
RN4909FE
−0.311
2004-07-01
0.311
−100
−500
Max
−0.3
−5.8
−2.6
Max
Max
61.1
2.35
100
500
0.3
5.8
2.6
⎯
⎯
⎯
⎯
6
6
MHz
MHz
Unit
Unit
Unit
mA
mA
kΩ
nA
pF
nA
pF
V
V
V
V
V
V