SI7983DP Vishay, SI7983DP Datasheet

no-image

SI7983DP

Manufacturer Part Number
SI7983DP
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7983DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72637
S-32520—Rev. A, 08-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−20
(V)
J
8
D1
6.15 mm
ti
7
D1
t A bi
6
D2
PowerPAK SO-8
Bottom View
0.020 @ V
0.024 @ V
0.017 @ V
5
J
J
a
a
= 150_C)
= 150_C)
t
D2
a
a
r
Parameter
Parameter
DS(on)
Dual P-Channel 20-V (D-S) MOSFET
1
GS
GS
GS
a
a
S1
= −2.5 V
= −1.8 V
= −4.5 V
(W)
2
G1
a
Ordering Information: Si7983DP-T1—E3
3
S2
5.15 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−10.1
−12
−11
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
Symbol
Symbol
1
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
APPLICATIONS
D Load Switch
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
P-Channel MOSFET
GS
DS
D
D
S
D
D
with Low 1.07-mm Profile
stg
D
S
1
1
10 secs
Typical
−9.6
−2.9
−12
3.5
2.2
2.2
26
60
−55 to 150
G
−20
−30
"8
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
−7.7
−6.2
−1.2
1.4
0.9
2.7
35
85
S
D
2
2
Si7983DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

Related parts for SI7983DP

SI7983DP Summary of contents

Page 1

... FEATURES D TrenchFETr Power MOSFET I (A) D New Low Thermal Resistance PowerPAKr Package D with Low 1.07-mm Profile −12 APPLICATIONS −11 D Load Switch −10.1 5. Ordering Information: Si7983DP-T1—E3 P-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C A ...

Page 2

... Si7983DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72637 S-32520—Rev. A, 08-Dec-03 New Product 25_C J 0.8 1.0 1.2 Si7983DP Vishay Siliconix Capacitance 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si7983DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 600 mA D 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 10 Document Number: 72637 S-32520—Rev. A, 08-Dec-03 New Product −3 − Square Wave Pulse Duration (sec) Si7983DP Vishay Siliconix − www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords