SI7983DP Vishay, SI7983DP Datasheet - Page 2

• Manufacturer Part Number: SI7983DP
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si7983DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
V
GS
Output Characteristics
− Drain-to-Source Voltage (V)
a
= 5 thru 2 V
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
4
SD
t
t
rr
fs
gs
gd
r
f
g
g
1.5 V
1 V
5
New Product
V
DS
I
V
D
DS
^ −1 A, V
= −10 V, V
I
V
F
= −20 V, V
V
V
V
V
V
V
V
V
DS
= −2.9 A, di/dt = 100 A/ms
GS
GS
I
DS
GS
V
DS
S
DS
DD
DD
Test Condition
DS
v −5 V, V
= −2.9 A, V
= V
= −4.5 V, I
= −1.8 V, I
= −2.5 V, I
= −15 V, I
= −20 V, V
= −10 V, R
= −10 V, R
= 0 V, V
GEN
f = 1 MHz
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
GS
= −600 mA
D
D
GS
D
D
GS
L
L
= −4.1 A
= −12 A
= −11 A
= −4.5 V
= −12 A
= 10 W
= 10 W
= "8 V
= 0 V
= 0 V
J
D
= 55_C
g
30
25
20
15
10
= −12 A
= 6 W
5
0
0.00
0.25
V
GS
0.50
−0.40
Min
Transfer Characteristics
−30
− Gate-to-Source Voltage (V)
T
C
0.75
25_C
= 125_C
0.014
0.016
0.020
Typ
−0.8
12.1
1.00
390
190
106
7.2
41
49
35
60
8
S-32520—Rev. A, 08-Dec-03
Document Number: 72637
1.25
−55_C
"100
Max
0.017
0.020
0.024
−1.2
585
285
160
−1
−1
−5
74
55
90
1.50
1.75
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.00