OPE5T85 Roithner LaserTechnik GmbH, OPE5T85 Datasheet

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OPE5T85

Manufacturer Part Number
OPE5T85
Description
High Speed Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
High Speed GaAlAs Infrared Emitter
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions
MAXIMUM RATINGS
ELECTRO-OPTICAL CHARACTERISTICS
*3
1
2
The OPE5T85 is GaAlAs infrared emitting diode
and environments for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
CCCCCCCCCCCCCC 2
CCCCCCC 1C
Symbol
*3
Topr.
Tsol.
V
P
I
I
O P E 5 T 8 5
FPC
FC
DC
RC
Symbol
tr/tf
V
Ct
I
Ie
fc
R

F
p
C
C
C
-25~ +85
Rating
3
260.
150
100
1.0
4.0
I
Conditions
F
DD EC
I
I
I
I
I
I
V
F
f=1
F
F
F
F
F
=50 EC
=50 EC
=50 EC
=50 C
=50 C
=50 C
R
D ECEEC
DIMENSIONS (Unit : mm)
=4VC
C
C
(Ta=25)
Unit
°CC
°CC
AC
Min.
EC
2- 0.5
C
50
C
Tolerance : ±0.2mm
C
C
C
C
C
C
C
/ Anode
/ Cathode
25/13
Typ.
120
850
1.5
±8
20
45
14
C
2.54
Max.
2.0
10
C
C
C
C
C
C
(Ta=25)
Unit
deg.
MHz
µEC
ns
V
/
C
C
C

OPE5T85 Summary of contents

Page 1

... High Speed GaAlAs Infrared Emitter The OPE5T85 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. ...

Page 2

... F 0.8 0.6 0.4 0.2 0 100 700 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.5 1.6 (V) 4 OPE5T85 Ta=25 Ta= 100 200 500 Forward Current IF(mA) Ta=25 750 800 850 900 950 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 0.5 0 0.5 Relative Radiant intensity Ta=25 40° ...

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