HY27US081G1M Hynix Semiconductor, HY27US081G1M Datasheet - Page 22

• Manufacturer Part Number: HY27US081G1M
• Description: 1gb Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.2 / May. 2007
CE
RE
I/Ox
R/B
Notes : Transition is measured ±200mV from steady state voltage with load.
Figure 8: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L)
This parameter is sampled and not 100% tested.
t
t
RR
REA
t
CEA
t
RP
Dout
Figure 7. Input Data Latch Cycle
t
RC
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
t
REH
t
REA
Dout
t
RHZ
HY27US(08/16)1G1M Series
t
REA
Dout
t
t
RHZ*
OH
t
t
OH
CHZ*
Preliminary
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