HY27US081G1M Hynix Semiconductor, HY27US081G1M Datasheet - Page 8

• Manufacturer Part Number: HY27US081G1M
• Description: 1gb Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.2 / May. 2007
NOTE:
1. L must be set to Low.
2. A8 is set to LOW or High by the 00h or 01h Command.
NOTE:
1. L must be set to Low.
READ 1
READ 2
READ ID
RESET
PAGE PROGRAM
COPY BACK PGM
BLOCK ERASE
READ STATUS REGISTER
2nd Cycle
3rd Cycle
4th Cycle
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
1st Cycle
FUNCTION
IO0
A17
A25
A0
A9
IO0
A17
A25
A0
A9
1st CYCLE
00h/01h
50h
90h
80h
00h
60h
70h
FFh
IO1
A10
A18
A26
Table 3: Address Cycle Map(x8)
A1
Table 4: Address Cycle Map(x16)
IO1
A10
A18
A26
A1
Table 5: Command Set
2nd CYCLE
IO2
A11
A19
L
A2
(1)
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
D0h
10h
8Ah
-
-
-
-
-
IO2
A11
A19
L
A2
(1)
IO3
A12
A20
L
A3
(1)
3rd CYCLE
IO3
A12
A20
L
A3
10h
(1)
IO4
A13
A21
-
-
-
-
-
-
-
L
A4
(1)
HY27US(08/16)1G1M Series
IO4
A13
A21
4th CYCLE
L
A4
IO5
A14
A22
(1)
L
A5
(1)
IO6
IO5
A15
A23
A14
A22
L
L
A6
A5
(1)
(1)
Acceptable command
during busy
IO7
A16
A24
L
A7
IO6
(1)
A15
A23
L
A6
Preliminary
(1)
Yes
Yes
IO8-IO15
L
L
L
L
IO7
A16
A24
(1)
(1)
(1)
(1)
L
A7
(1)
8