SUP90N06-6M0P Vishay, SUP90N06-6M0P Datasheet

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SUP90N06-6M0P

Manufacturer Part Number
SUP90N06-6M0P
Description
N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP90N06-6M0P-E3
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
SUP90N06-6M0P-E3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
(BR)DSS
Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free)
60
(V)
0.006 at V
r
DS(on)
a
T O-220AB
GS
T op V i e w
G D S
J
a
(Ω)
= 175 °C)
= 10 V
c
N-Channel 60-V (D-S) MOSFET
I
D
90
(A)
d
C
= 25 °C, unless otherwise noted
Q
g
78.5
(Typ)
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• 100 % R
• Power Supply
- Secondary Synchronous Rectification
Industrial
G
Symbol
Symbol
T
R
J
R
V
V
E
I
g
N-Channel MOSFET
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
D
S
SUP90N06-6m0P
- 55 to 175
Limit
Limit
± 20
272
3.75
240
125
0.55
90
90
60
50
40
d
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SUP90N06-6M0P Summary of contents

Page 1

... V (V) r (Ω) (BR)DSS DS(on) 0.006 O-220AB Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUP90N06-6m0P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V 0.0055 °C C 0.0053 25 °C 0.0051 125 °C 0.0049 0.0047 0.0045 SUP90N06-6m0P Vishay Siliconix 100 125 ° °C 25 ° Gate-to-Source Voltage (V) GS Transconductance ...

Page 4

... SUP90N06-6m0P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g On-Resistance vs. Junction Temperature 100 150 °C 10 1.0 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Gate Charge ...

Page 5

... Document Number: 69536 S-72508-Rev. A, 03-Dec-07 1000 100 10 0.1 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP90N06-6m0P Vishay Siliconix Limited DS(on °C C Single Pulse 0 Drain-to-Source Voltage ( minimum V ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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