SUP90N06-05L Vishay, SUP90N06-05L Datasheet

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SUP90N06-05L

Manufacturer Part Number
SUP90N06-05L
Description
N-channel 60-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SUP90N06-05L
Manufacturer:
VISHAY
Quantity:
12 500
Notes
a.
b.
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (Free Air)
Junction-to-Case
V
Package limited.
See SOA curve for voltage derating.
(BR)DSS
Ordering Information: SUP90N06-05L—E3
60
60
(V)
TO-220AB
Top View
G D S
J
J
= 175_C)
= 175_C)
0.0055 @ V
0.0049 @ V
N-Channel 60-V (D-S) 175_C MOSFET
Parameter
Parameter
DRAIN connected to TAB
r
DS(on)
GS
GS
(W)
= 4.5 V
= 10 V
T
L = 0.1 mH
T
T
C
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
I
D
90
90
(A)
a
a
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
AS
D
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
APPLICATIONS
D Automotive Such As
D Synchronous Rectification
ï High-Side Switch
ï Motor Drives
ï 12-V Battery
N-Channel MOSFET
D
S
ï55 to 175
Limit
Limit
"20
300
62.5
240
280
90
90
0.5
60
75
SUP90N06-05L
a
a
b
Vishay Siliconix
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
V
A
A
1

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SUP90N06-05L Summary of contents

Page 1

... DS(on) 0.0049 @ 0.0055 @ V GS TO-220AB DRAIN connected to TAB Top View Ordering Information: SUP90N06-05L—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current, Single Pulse ...

Page 2

... SUP90N06-05L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Drain-to-Source Voltage (V) DS Document Number: 73037 S-41504—Rev. A, 09-Aug-04 New Product 0.008 = ï55_C C 0.006 25_C 125_C 0.004 0.002 0.000 80 100 SUP90N06-05L Vishay Siliconix Transfer Characteristics 250 200 150 100 T = 125_C C 50 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V ï Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUP90N06-05L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.8 1.5 1.2 0.9 0.6 0.3 0.0 ï50 ï ï Junction Temperature (_C) J Avalanche Current vs. Time 1000 I ( 25_C 100 ( 150_C 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product ...

Page 5

... Document Number: 73037 S-41504—Rev. A, 09-Aug-04 New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case ï2 10 Square Wave Pulse Duration (sec) SUP90N06-05L Vishay Siliconix Safe Operating Area 10 ms 100 ms Limited by r DS(on ms, 100 ms 25_C C Single Pulse 1 ...

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