PDTA115T NXP Semiconductors, PDTA115T Datasheet - Page 5

• Manufacturer Part Number: PDTA115T
• Description: Pdta115t Series Pnp Resistor-equipped Transistor; R1 = 100 Kohm, R2 = Open
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
Table 8:
T
9397 750 14213
Product data sheet
Symbol
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
Fig 1. DC current gain as a function of collector
FE
CEsat
c
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
h
FE
10
10
10
3
2
V
current; typical values
10
amb
amb
amb
CE
Characteristics
1
= 5 V.
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
= 100 C.
= 25 C.
= 40 C.
1
(1)
(2)
(3)
10
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
= 150 C
= 5 mA; I
I
C
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
001aab511
(mA)
10
C
C
B
Rev. 04 — 5 April 2005
E
B
B
E
2
= 0 A
= 0.25 mA
= 1 mA
= 0 A
= 0 A;
= i
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
0 A
e
= 0 A;
Fig 2. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
1
2
10
I
function of collector current; typical values
C
amb
amb
amb
/I
B
1
= 20.
= 100 C.
= 25 C.
= 40 C.
Min
-
-
-
-
100
-
70
-
PDTA115T series
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(1)
(2)
(3)
Typ
-
-
-
-
-
-
100
-
10
Max
-
130
3
I
C
100
1
50
100
150
(mA)
001aab512
10
2
Unit
nA
nA
mV
k
pF
A
A
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