PDTA123E NXP Semiconductors, PDTA123E Datasheet - Page 5

• Manufacturer Part Number: PDTA123E
• Description: Pnp Resistor-equipped Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
CHARACTERISTICS
T
2004 Aug 02
R
I
I
I
h
V
V
V
R1
C
SYMBOL
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
th(j-a)
c
PNP resistor-equipped transistors;
R1 = 2.2 k , R2 = 2.2 k
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
f = 1 MHz
C
C
C
E
CB
CE
CE
EB
CE
= i
= 10 mA; I
= 1 mA; V
= 20 mA; V
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
e
= 0 A; V
5
CONDITIONS
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
C
C
CE
E
B
B
B
CB
= 0 A
= 20 mA
CE
CONDITIONS
= 0.5 mA
= 0 A
= 0 A
= 0 A; T
= 5 V
= 10 V;
25 C
= 0.3 V
j
= 150 C
30
1.54
0.8
MIN.
2
PDTA123E series
VALUE
250
500
500
625
830
500
500
2.2
1
TYP.
1.2
1.6
Product specification
2.86
1.2
3
MAX.
100
1
50
2
150
0.5
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
mA
mV
V
V
k
pF
UNIT
A
A