BGA2012 NXP Semiconductors, BGA2012 Datasheet - Page 3

• Manufacturer Part Number: BGA2012
• Description: 1900 Mhz High Linear Low Noise Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; V
2000 Dec 04
R
I
I
R
R
|s
NF
IP3
S
C
SYMBOL
th j-s
L IN
L OUT
1900 MHz high linear low noise amplifier
21
SYMBOL
in
|
2
supply current
control current
return losses input
return losses output
insertion power gain
noise figure
input intercept point
thermal resistance from junction
to solder point
PARAMETER
S
= 3 V; I
PARAMETER
S
= 7 mA; f = 1900 MHz; T
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application (see Fig.2)
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2; I
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
P
tot
CONDITIONS
= 135 mW; T
3
j
CONDITIONS
= 25 C; unless otherwise specified.
s
S
100 C
= 7 mA
5
MIN.
VALUE
350
7.5
0.11
14
16
14
1.7
2.2
2.3
7
10
11
20
14
9
10
8
7
TYP.
Product specification
10
BGA2012
MAX.
UNIT
K/W
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
UNIT