MT8VDDT12832UY-6 Micron Semiconductor Products, MT8VDDT12832UY-6 Datasheet - Page 32
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MT8VDDT12832UY-6
Manufacturer Part Number
MT8VDDT12832UY-6
Description
128mb, 256mb, 512mb X32, Dr 100-pin Ddr Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT8VDDT12832UY-6.pdf
(36 pages)
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Table 16:
Table 17:
Figure 14:
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_2.fm - Rev. G 5/05 EN
SDA OUT
Mode
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
1
0
1
1
0
0
t F
t HD:STA
V
V
V
V
IH
IH
IH
IH
t LOW
t AA
WC
V
V
or V
or V
or V
or V
IL
IL
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
IL
IL
IL
IL
b7
t HIGH
1
0
t HD:DAT
Bytes
Device Type Identifier
≤ 16
≥ 1
1
1
1
1
32
b6
0
1
Initial Sequence
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t DH
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
b4
0
0
SA2
SA2
b3
Serial Presence Detect
©2004, 2005 Micron Technology, Inc. All rights reserved.
Chip Enable
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0
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