TS808C06 Fuji Electric holdings CO.,Ltd, TS808C06 Datasheet
TS808C06
Manufacturer Part Number
TS808C06
Description
Schottky Barrier Diode
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.TS808C06.pdf
(3 pages)
TS808C06
SCHOTTKY BARRIER DIODE
Absolute maximum ratings
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Electrical characteristics (Ta=25°C Unless otherwise specified )
High speed power switching
Forward voltage drop
Reverse current
Thermal resistance
Low V
Super high speed switching
High reliability by planer design
Features
Applications
Maximum ratings and characteristics
F
Item
Item
Symbol
Symbol
V
V
T
T
R
I
I
V
o
FSM
I
j
RRM
RRM
RSM
stg
(30A)
th(j-c)
FM
tw=500ns, duty=
Square wave, duty=
Sine wave
10ms
Tc=115°C
I
V
Junction to case
FM
R
Conditions
=V
=12.5A
RRM
Conditions
1/40
1/2
JEDEC
EIAJ
*
Outline drawings, mm
Connection diagram
Average forward current of centertap full wave connection
1.2
0.2
-40 to +150
-40 to +150
Rating
10
1
5.08
Max.
20
200
+0.5
0.58
1.2
60
60
30*
0.8
+0.2
—0.1
(60V / 30A )
2
4
1.
2, 4. Drain
3.
4.5
2.7
Gate
Source
3
0.2
1.32
0.4
Unit
Unit
°C/W
°C
°C
mA
V
V
A
A
+0.2
V
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TS808C06 Summary of contents
Page 1
... TS808C06 SCHOTTKY BARRIER DIODE Features Low V F Super high speed switching High reliability by planer design Applications High speed power switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current ...
Page 2
... Junction Capacitance Characteristic (typ.) DC 1000 o Sine wave =180 o Square wave =180 o Square wave =120 o Square wave =60 100 (A) TS808C06 (30A) Reverse Characteristic (typ.) o Tj=150 C o Tj=125 C o Tj=100 Reverse Voltage (V) ...
Page 3
... Surge Capability 1000 100 Number of Cycles at 50Hz Transient Thermal Impedance 100 - Time (sec.) TS808C06 (30A) 2 ...