TS808C06 Fuji Electric holdings CO.,Ltd, TS808C06 Datasheet - Page 2

• Manufacturer Part Number: TS808C06
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(60V / 30A )
Characteristics
0.01
100
0.1
160
150
140
130
120
110
100
10
90
80
70
60
22
20
18
16
14
12
10
1
0.0
8
6
4
2
0
0
0
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
Forward Characteristic
0.1
Io
5
2
VF
360°
360°
0.2
Io
Io
Square wave =120
Square wave =180
Square wave =60
10
Forward Power Dissipation
Sine wave =180
Current Derating (Io-Tc)
Io
4
Forward Voltage
0.3
VR=30V
Average Forward Current
15
Average Output Current
0.4
6
20
DC
o
o
o
o
0.5
8
25
0.6
10
(V)
Tj=150
Tj=125
Tj=100
30
Tj=25
0.7
Sine wave =180
Square wave =180
Square wave =120
Square wave =60
DC
(typ.)
Per 1element
12
o
(A)
C
35
o
o
o
0.8
(A)
C
C
C
14
0.9
40
o
o
o
o
1.0
16
45
1000
10
10
10
10
10
10
100
-1
-2
-3
20
18
16
14
12
10
2
1
0
8
6
4
2
0
0
0
Junction Capacitance Characteristic (typ.)
VR
10
10
Reverse Characteristic (typ.)
360°
Reverse Power Dissipation
VR
20
VR
VR
20
10
Reverse Voltage
Reverse Voltage
Reverse Voltage
30
TS808C06 (30A)
30
40
40
50
(V)
(V)
50
(V)
60
Tj= 25
Tj=150
Tj=125
Tj=100
60
=180
o
DC
o
C
o
o
70
C
C
C
o
100
70