RN2970 TOSHIBA Semiconductor CORPORATION, RN2970 Datasheet

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RN2970

Manufacturer Part Number
RN2970
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Equivalent Circuit
Maximum Ratings
Equivalent Circuit
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1970~RN1971
* : Total rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Characterisstic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
(Top View)
(Ta = 25°C) (Q1, Q2 Common)
RN2970,RN2971
Symbol
V
V
V
P
T
CBO
CEO
EBO
I
T
stg
C
C
j
*
−55~150
Rating
−100
−50
−50
200
150
−5
1
Unit
mW
mA
°C
°C
V
V
V
JEDEC
JEITA
TOSHIBA
Weight: 6.8mg(typ.)
RN2970,RN2971
2-2J1B
2005-02-22
Unit: mm

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RN2970 Summary of contents

Page 1

... Junction temperature Storage temperature range * : Total rating Equivalent Circuit (Top View) Symbol Rating Unit V −50 V CBO V −50 V CEO V −5 V EBO I −100 200 °C T 150 j °C T −55~150 stg 1 RN2970,RN2971 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1B Weight: 6.8mg(typ.) 2005-02-22 ...

Page 2

... V = −5V ― −5mA (sat ― −10V ― −10V ― 2 RN2970,RN2971 Min Typ. Max = 0 ― ― −100 ― ― −100 = −1mA 120 ― 400 C = −0.25mA ― −0.1 −0.3 = −5mA ― 200 1MHz ― ...

Page 3

... Q2 Common) RN2970,RN2971 3 2005-02-22 ...

Page 4

... Q2 Common) RN2970,RN2971 4 2005-02-22 ...

Page 5

... Type Name Marking RN2970 RN2971 RN2970,RN2971 5 2005-02-22 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. RN2970,RN2971 6 030619EAA 2005-02-22 ...

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