RN2970 TOSHIBA Semiconductor CORPORATION, RN2970 Datasheet - Page 2

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RN2970

Manufacturer Part Number
RN2970
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
Characteristic
RN2970
RN2971
(Ta = 25°C) (Q1, Q2 Common)
V
Symbol
CE (sat)
I
I
CBO
h
C
EBO
R1
f
FE
T
ob
Circuit
Test
2
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= −5mA, I
= −5V, I
= −50V, I
= −5V, I
= −10V, I
= −10V, I
Test Condition
B
C
C
E
C
E
= −0.25mA
= 0
= −1mA
= 0
= −5mA
= 0, f = 1MHz
3.29
120
Min
7
RN2970,RN2971
Typ.
−0.1
200
4.7
10
3
2005-02-22
−100
−100
−0.3
6.11
Max
400
13
6
MHz
Unit
kΩ
nA
nA
pF
V

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