FJN965 Fairchild Semiconductor, FJN965 Datasheet
FJN965
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FJN965 Summary of contents
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... EBO h DC Current Gain FE1 h FE2 V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Band Width Product T C Collector Output Capacitance ob ©2002 Fairchild Semiconductor Corporation FJN965 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition I =1mA =100 ...
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... Ta= Ta=-40 C 100 10 0.01 0 [A], COLLECTOR CURRENT C Figure 3. DC current Gain Ta=- Ta= Ta=125 C 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.8 I =200mA B 1.6 1.4 1.2 1.0 0.8 0.6 I =20mA B 0.4 0.2 0 0.0 Figure 2. Base-Emitter On Voltage 0.1 0.01 1E-3 10 100 0.01 Figure 4. Collector-Emitter Saturation Voltage 100 ...
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... Typical Characteristics 1.0 0.8 0.6 0.4 0.2 0 C], AM BIEN T TEM PER ATU RE a Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 100 0.1 0.01 100 125 150 0.1 Figure 8. Forward Bias Safe Operating Area S ingle P ulse 10m 100 ...
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... Fairchild Semiconductor Corporation Rev. A2, August 2002 ...
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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...