FJN965 Fairchild Semiconductor, FJN965 Datasheet - Page 2

• Manufacturer Part Number: FJN965
• Description: Fjn965 Npn Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
0.1
14
12
10
100
10
10
8
6
4
2
0
1
0.01
0.01
0
Figure 5. Base-Emitter On Voltage
Figure 1. Static Characteristic
V
Ta=-40
Ta=-40
Figure 3. DC current Gain
Ta=125
Ta=25
Ta=25
CE
Ta=125
2
[V], COLLECTOR-EMITTER VOLTAGE
I
o
0.1
0
o
I
0
C
C
C
C
C
C
o
[A], COLLECTOR CURRENT
0
C
[A], COLLECTOR CURRENT
C
0.1
4
1
6
1
8
10
I
C
=30I
I
V
B
I
B
=200mA
CE
=20mA
10
B
10
=2V
100
Figure 4. Collector-Emitter Saturation Voltage
1E-3
0.01
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
100
10
80
60
40
20
Figure 6. Collector Output Capacitance
0.0
1
0.01
0
1
Figure 2. Base-Emitter On Voltage
Ta=125
Ta=25
Ta=-40
0.2
V
o
V
C
o
o
CB
C
C
BE
[V], COLLECTOR-BASE VOLTAGE
I
[V], BASE-EMITTER VOLTAGE
C
0.4
[A], COLLECTOR CURRENT
Ta=125
0.1
o
C
0.6
25
o
10
C
0.8
1
-40
o
C
1.0
I
C
=30I
I
E
=0,f=1MHZ
V
B
CE
1.2
=2V
10
Rev. A2, August 2002
1.4
100