PBR951 NXP Semiconductors, PBR951 Datasheet - Page 4

• Manufacturer Part Number: PBR951
• Description: Uhf Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1998 Aug 10
DC characteristics
V
V
V
I
I
h
AC characteristics
C
f
G
F
SYMBOL
j
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
re
UHF wideband transistor
UM
UM
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
noise figure
PARAMETER
I
I
I
V
V
I
I
I
I
I
T
I
T
f = 1 GHz
f = 2 GHz
C
C
E
C
C
C
C
C
C
amb
amb
S
S
CB
EB
= 10 A; I
= 100 A; I
= 100 A; I
= 5 mA; V
= 15 mA; V
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
=
=
= 10 V; I
= 1 V; I
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
CB
; I
; I
4
12
CONDITIONS
C
C
= 6 V; f = 1 MHz
C
C
CE
= 5 mA; V
= 5 mA; V
is zero.
E
= 0
E
B
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 6 V
= 6 V
= 6 V; f
= 6 V;
= 6 V;
G
CE
CE
UM
m
= 6 V;
= 6 V;
= 1 GHz
=
10
log
-------------------------------------------------------------- dB
20
10
1.5
50
1
MIN.
–
S
11
100
100
0.4
8
14
8
1.3
2
S
2
TYP.
21
Product specification
1
2
–
S
100
100
200
MAX.
PBR951
22
2
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
UNIT