TT3031NP Sanyo Semiconductor Corporation, TT3031NP Datasheet

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TT3031NP

Manufacturer Part Number
TT3031NP
Description
Pnp Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENA0330
TT3031NP
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
High-speed switching applications (switching regulator, driver circuit).
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
I B
Tj
f T
PNP Epitaxial Planar Silicon Transistor
50V / 3A High-Speed Switching
Applications
SANYO Semiconductors
PW 10 s, duty cycle 10%
V CB =- -40V, I E =0A
V EB =- -4V, I C =0A
V CE =- -2V, I C =--125mA
V CE =- -10V, I C =--300mA
V CB =- -10V, f=1MHz
TT3031NP
Conditions
Conditions
DATA SHEET
O0406EA MS IM TC-00000241
min
200
Ratings
typ
Ratings
130
55
Continued on next page.
--55 to +150
max
150
--50
--50
0.8
500
--10
--10
--6
--3
--5
--1
No. A0330-1/4
MHz
Unit
Unit
pF
W
V
V
V
A
A
A
C
C
A
A

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TT3031NP Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TT3031NP SANYO Semiconductors PNP Epitaxial Planar Silicon Transistor 50V / 3A High-Speed Switching ...

Page 2

... SANYO : NP 1.3 1 --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.2 --0.4 --0.6 Collector-to-Emitter Voltage TT3031NP Symbol Conditions V CE (sat =--2.5A =--125mA V BE (sat =--2.5A =--125mA V (BR)CBO I C =--100 =0A V (BR)CEO I C =--1mA (BR)EBO I E =--100 = See specified Test Circuit. t stg See specified Test Circuit ...

Page 3

... Collector Current (sat --1 --0.01 --0.1 Collector Current TT3031NP 1000 -- 100 --1.0 --0.01 IT11593 1000 --10V 100 --1 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. TT3031NP 120 140 160 IT11601 PS No ...

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