TT3031NP Sanyo Semiconductor Corporation, TT3031NP Datasheet - Page 2

• Manufacturer Part Number: TT3031NP
• Description: Pnp Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7522-002
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
0.45
0.45
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0.5
1.3
0
0
1 2 3
5.0
4.0
Parameter
Collector-to-Emitter Voltage, V CE -- V
--0.2
1.3
--0.4
I C -- V CE
4.0
0.44
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
--0.6
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
t stg
t on
t f
--0.8
I B =0mA
I C =--2.5A, I B =--125mA
I C =--2.5A, I B =--125mA
I C =--100 A, I E =0A
I C =--1mA, R BE =
I E =--100 A, I C =0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IT11591
--1.0
TT3031NP
Conditions
Switching Time Test Circuit
--3
--2
--1
0
0
INPUT
50
PW=20 s
D.C. 1%
V CE = --2V
I C = --10I B1 =10I B2 = --2A
--0.2
V R
V BE =5V
Base-to-Emitter Voltage, V BE -- V
220 F
I B1
I B2
+
1k
--0.4
min
I C -- V BE
--50
--50
--6
470 F
+
--0.6
V CC = --25V
Ratings
typ
--250
280
46
23
OUTPUT
R L
--0.8
max
--500
--1.2
No. A0330-2/4
--1.0
IT11592
Unit
mV
ns
ns
ns
V
V
V
V
--1.2