T8714VA Vishay, T8714VA Datasheet
T8714VA
Related parts for T8714VA
T8714VA Summary of contents
Page 1
... Specification of GaAlAs IR Emitting Diode Chip - 21594-1 DESCRIPTION T8714VA is an infrared, 865 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only ...
Page 2
... T8714VA Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage (2) Radiant power (3) Radiant intensity Radiant power (epoxy encapsulated) (4) Radiant power chip Temperature coefficient of radiant power Reverse voltage Temperature coefficient of forward voltage Angle of half intensity Peak wavelength Spectral bandwidth Rise time/fall time Notes ( °C, unless otherwise specified ...
Page 3
... Document Number: 81130 For technical questions, contact: Rev. 1.1, 19-May-09 Specification of GaAlAs IR Emitting Diode Chip SYMBOL MIN 0.325 x 0.325 (1) optochipsupport@vishay.com T8714VA Vishay Semiconductors TYP. MAX. UNIT 0. 0.16 mm 0.14 mm Aluminum Gold alloy Sawing Epoxy bonding www.vishay.com ...
Page 4
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...