T8714VA Vishay, T8714VA Datasheet

T8714VA

Manufacturer Part Number

T8714VA

Description

Specification Of Gaalas Ir Emitting Diode Chip

Manufacturer

Vishay

Datasheet

1.T8714VA.pdf (4 pages)

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DESCRIPTION

T8714VA is an infrared, 865 nm emitting diode in GaAlAs

double hetero technology with high radiant power and high

speed. Anode is the bond pad on top.

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and

are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this

datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold

die may not perform on an equivalent basis to standard package products.

Note

Test condition see table “Basic Characteristics”

Note

MOQ: minimum order quantity

Note

Document Number: 81130

Rev. 1.1, 19-May-09

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PRODUCT SUMMARY

COMPONENT

T8714VA

ORDERING INFORMATION

ORDERING CODE

T8714VA-SF-F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Forward current

Reverse voltage

Surge forward current

Junction temperature

Operating temperature range

Storage temperature range chip

Storage temperature range on foil

= 25 °C, unless otherwise specified

21594-1

Specification of GaAlAs IR Emitting Diode Chip

For technical questions, contact:

Wafer sawn on foil

PACKAGING

(mW/sr)

TEST CONDITION

4.2

= 100 µs

optochipsupport@vishay.com

ϕ (deg)

> ± 80

FEATURES

• Package type: chip

• Package form: single chip

• Technology: double hetero

• Dimensions chip (L x W x H in mm): 0.37 x 0.37

• Peak wavelength: λ = 865 nm

• Compliant to RoHS directive 2002/95/EC and in

x 0.16

accordance to WEEE 2002/96/EC

MOQ: 13 000 pcs

REMARKS

SYMBOL

FSM

amb

stg1

stg2

Vishay Semiconductors

865

(nm)

- 40 to + 100

- 40 to + 50

VALUE

100

125

PACKAGE FORM

Chip

T8714VA

www.vishay.com

(ns)

UNIT

°C

Related parts for T8714VA

T8714VA Summary of contents

Page 1

... Specification of GaAlAs IR Emitting Diode Chip - 21594-1 DESCRIPTION T8714VA is an infrared, 865 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only ...

Page 2

... T8714VA Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage (2) Radiant power (3) Radiant intensity Radiant power (epoxy encapsulated) (4) Radiant power chip Temperature coefficient of radiant power Reverse voltage Temperature coefficient of forward voltage Angle of half intensity Peak wavelength Spectral bandwidth Rise time/fall time Notes ( °C, unless otherwise specified ...

Page 3

... Document Number: 81130 For technical questions, contact: Rev. 1.1, 19-May-09 Specification of GaAlAs IR Emitting Diode Chip SYMBOL MIN 0.325 x 0.325 (1) optochipsupport@vishay.com T8714VA Vishay Semiconductors TYP. MAX. UNIT 0. 0.16 mm 0.14 mm Aluminum Gold alloy Sawing Epoxy bonding www.vishay.com ...

Page 4

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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