T8714VA Vishay, T8714VA Datasheet - Page 2

• Manufacturer Part Number: T8714VA
• Description: Specification Of Gaalas Ir Emitting Diode Chip
• Manufacturer: Vishay

T8714VA
Vishay Semiconductors
Notes
(1)
(2)
(3)
(4)
BASIC CHARACTERISTICS
T
DIMENSIONS
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Radiant power
Radiant intensity
Radiant power
(epoxy encapsulated)
Radiant power chip
Temperature coefficient of radiant
power
Reverse voltage
Temperature coefficient of forward
voltage
Angle of half intensity
Peak wavelength
Spectral bandwidth
Rise time/fall time
T
The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating
The radiant intensity, I
The radiant power, φ
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
21623
1.0
0.8
0.6
0.4
0.2
0
700
Fig. 5 - Relative Spectral Emission
(2)
(3)
(4)
750
e
, is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer
Electrode pattern:
e
, is measured on the geometric axis of the TO-18 header
21624
λ - Wavelength (nm)
φ
800
e rel
= f (λ)
850
For technical questions, contact:
900
P (anode) side
(1)
I
F
Specification of GaAlAs IR Emitting
= 30 mA
950
TEST CONDITION
I
I
I
I
I
I
I
F
F
F
F
I
F
F
I
I
F
I
F
I
F
F
R
F
1000
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 50 mA
= 30 mA
= 30 mA
= 10 µA
= 1 mA
Diode Chip
N (cathode) side
Fig. 7
[e-mail]
P-type GaAlAs
21596
SYMBOL
- 10°
Sectional view (schematic):
TK
0°
TK
- 20°
λ
t
V
V
r
φ
φ
φ
λ
100
I
ϕ
0.5
, t
typ. 150 µm
- 30°
e
e
e
e
R
p
F
VF
φe
f
- 40°
- 50°
- 60°
Fig. 6 - Radiant Characteristics
MIN.
850
4.4
50
5
N-type GaAlAs
P-type GaAlAs
- 70°
Relative Angular Intensity
- 80°
I
rel
> ± 80
- 0.35
TYP.
- 1.8
865
= f(ϕ)
1.5
4.2
5.8
90°
26
52
18
48
13
0
anode
80°
Document Number: 81130
70°
MAX.
50
880
7.2
60°
Rev. 1.1, 19-May-09
50°
40°
30°
mW/sr
100
mV/K
UNIT
mW
mW
mW
%/K
deg
20°
nm
nm
ns
V
V
10°
0°