BT136B NXP Semiconductors, BT136B Datasheet

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BT136B

Manufacturer Part Number
BT136B
Description
Triacs Sensitive Gate
Manufacturer
NXP Semiconductors
Datasheet
1.BT136B.pdf (6 pages)

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Part Number:
BT136B-500G
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Part Number:
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Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications, where
high sensitivity is required in all four
quadrants.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/ s.
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/ s
= 6 A; I
1
2
G
= 0.2 A;
3
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
mb
j
= 25 ˚C prior to
mb
107 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT136B-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-600
600
MAX.
600E
600
BT136B series E
25
1
4
MAX.
Product specification
150
125
3.1
0.5
25
27
50
50
50
10
4
2
5
5
-800
800
MAX.
800E
800
25
4
Rev 1.300
UNIT
A/ s
A/ s
A/ s
A/ s
UNIT
A
G
˚C
˚C
W
W
V
A
A
A
A
V
T1
2
V
A
A
s

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BT136B Summary of contents

Page 1

... 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136B series E MAX. MAX. UNIT BT136B- 600E 800E 600 800 SYMBOL T2 MIN. MAX. UNIT -600 -800 1 ...

Page 2

... 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136B series E MIN. TYP. MAX. UNIT - - 3.0 K 3.7 K K/W MIN. TYP. MAX. UNIT - ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136B series E 107 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 107˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136B series E typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width ...

Page 5

... Net Mass: 1.4 g 2.54 (x2) MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". June 2001 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BT136B series E 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.300 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT136B series E Rev 1.300 ...

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