BTB1386N3 Cystech Electonics Corp., BTB1386N3 Datasheet
BTB1386N3
Related parts for BTB1386N3
BTB1386N3 Summary of contents
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... Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)( Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. BTB1386N3 CYStech Electronics Corp. =-0.25V(typ) CE(sat) (Ta=25 C) Symbol V CBO V CEO V EBO I ...
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... CBO BV -12 CEO BV -6 EBO I - CBO I - EBO *V - CE(sat 200 180 150 Cob - Classification Rank R Range 180~390 BTB1386N3 CYStech Electronics Corp. Typ. Max. Unit - - -100 nA - -100 nA - -0. 820 - - - - 250 - MHz 270~560 390~820 Spec ...
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... VBE(sat)@IC=20IB 1000 100 1 10 100 Collector Current---IC(mA) Power Derating Curve 250 200 150 100 100 Ambient Temperature---TA(℃) BTB1386N3 1000 100 IC=40IB 10 IC=10IB 1 1000 10000 1 1000 100 1000 10000 1 150 200 Spec. No. : C816N3-R Issued Date : 2003.12.18 Revised Date : Page No ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1386N3 CYStech Electronics Corp ...