BTB1386N3 Cystech Electonics Corp., BTB1386N3 Datasheet - Page 2
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BTB1386N3
Manufacturer Part Number
BTB1386N3
Description
Low Vce Sat Pnp Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp.
Datasheet
1.BTB1386N3.pdf
(4 pages)
Characteristics
Classification Of h
Symbol
BTB1386N3
*V
BV
BV
BV
*h
*h
*h
I
I
Cob
CBO
EBO
CE(sat)
f
FE
FE
FE
T
CBO
CEO
EBO
Range
1
2
3
Rank
Min.
200
180
150
-15
-12
-6
-
-
-
-
-
(Ta=25 C)
180~390
FE
R
2
Typ.
CYStech Electronics Corp.
250
60
-
-
-
-
-
-
-
-
-
270~560
-0.25
Max.
-100
-100
S
820
-
-
-
-
-
-
-
390~820
MHz
Unit
nA
nA
pF
V
V
V
V
-
-
-
T
I
I
I
V
V
I
V
V
V
V
V
C
C
E
C
*Pulse Test: Pulse Width 380µs, Duty Cycle 2%
CB
EB
CE
CE
CE
CE
CB
=-50µA
=-50µA
=-1mA
=-1A, I
=-15V
=-5V
=-2V, I
=-2V, I
=-2V, I
=-2V, I
=-10V, I
B
=-50mA
C
C
C
C
=-20mA
=-500mA
=-2A
=-200mA, f=100MHz
E
Test Conditions
=0A, f=1MHz
CYStek Product Specification
Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 2/4