SI8901EDB Vishay, SI8901EDB Datasheet - Page 2

no-image

SI8901EDB

Manufacturer Part Number
SI8901EDB
Description
Bi-directional P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8901EDB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI8901EDB-T2-E1
Quantity:
3 000
Si8901EDB
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Source Current
Zero Gate Voltage Source Current
On-State Source Current
Source1—Source2 On-State Resistance
Source1 Source2 On State Resistance
Forward Transconductance
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
b
0
Parameter
Gate-Current vs. Gate-Source Voltage
I
GSS
3
V
a
GS
@ 25_C (mA)
a
− Gate-to-Source Voltage (V)
6
J
= 25_C UNLESS OTHERWISE NOTED)
a
9
Symbol
r
r
V
S1S2(on)
S1S2(on)
I
I
I
t
t
I
I
GS(th)
S S
S1S2
S(on)
d(on)
d(off)
GSS
GSS
g
t
t
fs
r
f
12
15
I
SS
V
SS
^ −1 A, V
V
V
=− 20 V, V
V
V
V
SS
V
V
SS
V
V
V
V
SS
SS
GS
GS
GS
SS
SS
SS
SS
Test Condition
= 0 V, V
= 0 V, V
= −5 V, V
= V
= −1.8 V, I
= −4.5 V, I
= −2.5 V, I
= −20 V, V
= −10 V, I
= −10 V, R
= −10 V, R
GEN
GS
GS
, I
GS
GS
= −4.5 V, R
D
= 0 V, T
GS
= −350 mA
= "4.5 V
= "12 V
SS
SS
SS
SS
GS
L
L
= −4.5 V
= 10 W
= 10 W
= −1 A
= −1 A
= −1 A
= −1 A
10,000
= 0 V
1,000
0.01
J
100
0.1
= 85_C
10
g
1
= 6 W
0
T
Gate Current vs. Gate-Source Voltage
J
= 150_C
3
V
GS
−0.45
Min
−5
− Gate-to-Source Voltage (V)
T
J
6
= 25_C
0.048
0.062
0.081
Typ
2.3
2.2
1.3
7
9
S-50066—Rev. B, 17-Jan-05
Document Number: 72941
9
Max
0.060
0.080
0.105
"10
−1.0
"4
3.5
3.5
−1
−5
14
2
12
Unit
mA
mA
mA
mA
ms
ms
V
A
W
W
S
15

Related parts for SI8901EDB