SI8901EDB Vishay, SI8901EDB Datasheet - Page 4

• Manufacturer Part Number: SI8901EDB
• Description: Bi-directional P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si8901EDB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
30
25
20
15
10
0.01
5
0
0.01
0.01
0.1
0.1
2
1
2
1
Single Pulse Power, Junction-to-Ambient
10
10
−4
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
Single Pulse
10
1
Time (sec)
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
Normalized Thermal Transient Impedance, Junction-to-Foot
10
−3
10
100
−2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
1000
10
−1
10
−2
0.001
0.01
100
0.1
10
1
1
0.1
*V
by r
*Limited
GS
Single Pulse
DS(on)
T
u minimum V
C
V
= 25_C
DS
Safe Operating Area
− Drain-to-Source Voltage (V)
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
1
−1
DM
JM
GS
− T
t
at which r
A
1
= P
t
2
DM
Z
thJA
100
thJA
S-50066—Rev. B, 17-Jan-05
DS(on)
t
t
10
1
2
Document Number: 72941
(t)
= 95_C/W
is specified
10 ms, 100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
600
1
100