SI2319DS Vishay, SI2319DS Datasheet
SI2319DS
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SI2319DS Summary of contents
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... T = 70_C 25_C 70_C A T Symbol Si2319DS Vishay Siliconix FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch Ordering Information: Si2319DS-T1 Si2319DS-T1—E3 (Lead Free) 5 sec Steady State V − "20 GS −3.0 −2 −2.4 −1.85 I − −1.0 −0. ...
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... Si2319DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On Resistance Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage ...
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... Q − Total Gate Charge (nC) g Document Number: 72315 S-40844—Rev. B, 03-May- Si2319DS Vishay Siliconix Transfer Characteristics 125_C C 25_C 2 −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V − Gate-to-Source Voltage (V) GS Capacitance ...
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... Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0 250 mA D 0.0 −0.2 −0.4 −50 − − Temperature (_C) J www.vishay.com 25_C J 0.8 1.0 1.2 75 100 125 150 Safe Operating Area, Junction-to-Case 100 ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72315 S-40844—Rev. B, 03-May-04 −2 − Square Wave Pulse Duration (sec) Si2319DS Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 166_C/W thJA ( − ...
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