SI2319DS Vishay, SI2319DS Datasheet - Page 3

• Manufacturer Part Number: SI2319DS
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72315
S-40844—Rev. B, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
20
16
12
8
6
4
2
0
8
4
0
0
0
0
V
I
D
V
DS
GS
= 3 A
On-Resistance vs. Drain Current
2
2
= 20 V
= 4.5 V
2
V
Q
DS
g
Output Characteristics
I
− Drain-to-Source Voltage (V)
D
− Total Gate Charge (nC)
4
4
− Drain Current (A)
Gate Charge
4
V
GS
6
6
= 10 thru 5 V
1 V, 2 V
6
8
8
V
GS
= 10 V
8
10
10
4 V
3 V
12
12
10
800
700
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
10
8
6
4
2
0
0
−50
0.0
0
C
On-Resistance vs. Junction Temperature
0.5
−25
V
I
rss
D
5
GS
= 3 A
V
= 10 V
1.0
DS
V
T
10
GS
J
0
Transfer Characteristics
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
1.5
− Gate-to-Source Voltage (V)
15
25
Capacitance
C
2.0
T
oss
25_C
C
Vishay Siliconix
20
50
= 125_C
C
iss
2.5
25
75
3.0
Si2319DS
100
30
−55_C
3.5
www.vishay.com
125
35
4.0
150
4.5
40
3