SI2307BDS Vishay, SI2307BDS Datasheet - Page 4

• Manufacturer Part Number: SI2307BDS
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si2307BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
10
0.3
0.2
0.1
0.0
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
I
D
0
- Source-to-Drain Voltage (V)
= 250 µA
T
Threshold Voltage
T
J
0.4
J
= 150 °C
- Temperature (°C)
25
0.6
50
75
0.8
0.001
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
1.0
* V
Limited by R
125
Safe Operating Area, Junction-to-Case
GS
> minimum V
150
Single Pulse
1.2
V
Square Wave Pulse Duration (s)
T
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)*
1
GS
at which R
10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
DS(on)
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 µs
100 µs
1 ms
10 ms
100 ms
10 s, 1 s
DC, 100 s
0.1
V
2
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
4
T
1
A
Time (s)
= 25 °C
I
D
S-80427-Rev. C, 03-Mar-08
= 3.2 A
Document Number: 72699
6
10
100
8
10
1000