SI2308DS Vishay, SI2308DS Datasheet - Page 3
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SI2308DS
Manufacturer Part Number
SI2308DS
Description
N-channel 60-v D-s Rated Mosfet
Manufacturer
Vishay
Datasheet
1.SI2308DS.pdf
(5 pages)
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Part Number
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Quantity
Price
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Document Number: 70797
S-50574—Rev. C, 04-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 2.0 A
On-Resistance vs. Drain Current
= 30 V
2
V
1
DS
V
Q
3
GS
Output Characteristics
g
− Drain-to-Source Voltage (V)
I
= 4.5 V
− Total Gate Charge (nC)
D
V
GS
− Drain Current (A)
Gate Charge
4
2
= 10 thru 5 V
6
6
3
1, 2 V
V
4 V
3 V
GS
9
8
4
= 10 V
10
12
5
400
300
200
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
9
6
3
0
0
−50
0
0
On-Resistance vs. Junction Temperature
−25
V
I
D
C
GS
= 2.0 A
rss
V
V
1
6
= 10 V
DS
GS
T
Transfer Characteristics
J
0
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
T
25_C
C
C
Capacitance
25
= 125_C
12
oss
2
50
C
Vishay Siliconix
iss
18
3
75
Si2308DS
100
−55_C
24
4
www.vishay.com
125
150
30
5
3