SI2308DS Vishay, SI2308DS Datasheet - Page 4

• Manufacturer Part Number: SI2308DS
• Description: N-channel 60-v D-s Rated Mosfet
• Manufacturer: Vishay

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?70797.
www.vishay.com
4
Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
2
1
10
10
1
−50
0.00
−4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Single Pulse
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
I
10
D
T
J
J
− Temperature (_C)
= 250 mA
−3
25
= 150_C
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
−2
T
1.0
J
= 25_C
125
Square Wave Pulse Duration (sec)
150
1.2
For related documents such as package/tape drawings, part marking, and reliability data, see
10
−1
1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
12
9
6
3
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.1
− Gate-to-Source Voltage (V)
10
Single Pulse Power
Time (sec)
4
1
I
D
= 2.0 A
6
S-50574—Rev. C, 04-Apr-05
Document Number: 70797
100
10
8
500
100
10