SI2301ADS Vishay, SI2301ADS Datasheet - Page 3

• Manufacturer Part Number: SI2301ADS
• Description: P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 71835
S-20617—Rev. B, 29-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.6 A
On-Resistance vs. Drain Current
= 10 V
2
1
1
V
Q
DS
V
g
Output Characteristics
GS
I
– Drain-to-Source Voltage (V)
D
– Total Gate Charge (nC)
= 2.5 V
– Drain Current (A)
Gate Charge
V
4
2
GS
2
0, 0.5, 1 V
= 5, 4.5, 4, 3.5, 3 V
6
3
3
V
GS
2.5 V
8
4
4
= 4.5 V
1.5 V
2 V
New Product
10
5
5
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
–50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
0.5
= 3.6 A
V
= 4.5 V
4
DS
V
T
GS
J
0
Transfer Characteristics
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
C
1.0
– Gate-to-Source Voltage (V)
oss
25
Capacitance
8
C
Vishay Siliconix
1.5
iss
50
T
12
Si2301ADS
C
25_C
75
= –55_C
2.0
100
www.vishay.com
16
2.5
125
125_C
150
3.0
20
3