SI4447DY Vishay, SI4447DY Datasheet - Page 2

• Manufacturer Part Number: SI4447DY
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
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2
Si4447DY
Vishay Siliconix
Static
Gate Threshold Voltage
V
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2 %.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
20
16
12
b
8
4
0
Parameter
0
a
a
1
V
DS
a
Output Characteristics
– Drain-to-Source Voltage (V)
V
GS
a
a
= 10 thru 4 V
2
Symbol
DV
_
DV
V
r
r
3
I
DS(
DS(on)
t
GS(th)/Tj
I
C
t
I
I
GS(th)
D(on)
V
C
C
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
Q
t
DS/Tj
SD
oss
t
t
rss
iss
rr
fs
gs
gd
r
f
g
g
rr
)
3 V
_
4
New Product
V
V
5
DS
DS
V
V
V
I
I
D
D
DS
DS
DS
= –20 V, V
= –20 V, V
^ –1 A, V
^ –1 A, V
I
I
= –40 V, V
V
= –20 V, V
= –20 V, V
V
F
F
V
V
V
V
V
V
V
DS
GS
I
DS
DS
GS
= 1.7 A, di/dt = 100 A/ms
= 1.7 A, di/dt = 100 A/ms
DS
S
DS
DD
DD
Test Condition
= –1.7 A, V
p –5 V, V
= V
= –4.5 V, I
= 0 V, V
= –15 V, I
= –10 V, I
= –40 V, V
= –15 V R
= –15 V, R
I
I
P Channel
P-Channel
P Channel
P-Channel
P Ch
P-Channel
D
D
f = 1 MHz
GEN
GEN
GS
GS
GS
= 250 mA
= 250 mA
GS
GS
GS
, I
= –4.5 V, I
= –4.5 V, I
= –10 V, R
= –10 V, R
GS
D
= 0 V, T
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
GS
D
D
= –250 mA
D
GS
GS
L
L
= "16 V
= –4.5 A
= –4.5 A
= –3.9 A
l
= 15 W
= 15 W
= –10 V
= 0 V
= 0 V
J
20
16
12
D
D
8
4
0
= 55 _C
g
g
0.0
= –4.5 A
= –4.5 A
= 6 W
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
– Gate-to-Source Voltage (V)
1.5
Min
–0.8
–20
2.0
T
S-60178—Rev. A, 13-Feb-06
0.045
0.059
–0.79
Typ
11.5
–40
805
120
C
3.4
3.6
13
85
12
74
38
27
17
2.5
Document Number: 73662
9
2
8
25 _C
= – 55 _C
3.0
"100
Max
0.054
0.072
–2.2
–1.2
–10
110
–1
14
18
13
18
60
45
26
125 _C
3.5
mV/_C
mV/_C
Unit
nA
mA
mA
pF
pF
nC
nC
nC
ns
ns
ns
W
W
W
4.0
A
S
V