SI4447DY Vishay, SI4447DY Datasheet - Page 3

• Manufacturer Part Number: SI4447DY
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73662
S-60178—Rev. A, 13-Feb-06
0.10
0.08
0.06
0.04
0.02
0.00
20
10
6
5
4
3
2
1
0
1
0.0
0
0
I
D
V
Source-Drain Diode Forward Voltage
0.2
= 4.5 A
GS
On-Resistance vs. Drain Current
2
4
= 4.5 V
V
SD
V
Q
0.4
DS
g
– Source-to-Drain Voltage (V)
I
T
– Total Gate Charge (nC)
D
= 10 V
4
J
– Drain Current (A)
= 150 _C
Gate Charge
8
0.6
6
V
GS
0.8
12
V
= 10 V
DS
8
= 20 V
1.0
T
J
= 25 _C
16
10
1.2
_
1.4
20
12
New Product
1240
1116
0.30
0.25
0.20
0.15
0.10
0.05
0.00
992
868
744
620
496
372
248
124
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
–25
D
GS
rss
5
= 4.5 A
= 10 V
2
T
V
V
10
0
J
GS
DS
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
15
25
Capacitance
4
Vishay Siliconix
C
20
50
oss
C
T
T
iss
A
A
= 25 _C
= 125 _C
6
25
75
Si4447DY
100
I
30
D
= 4.5 A
www.vishay.com
8
125
35
150
10
40
3