SI5485DU Vishay, SI5485DU Datasheet

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SI5485DU

Manufacturer Part Number
SI5485DU
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 73779
S-70655-Rev. B, 09-Apr-07
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is ex-
posed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Ordering Information: Si5485DU-T1-E3 (Lead (Pb)-free)
DS
- 20
(V)
PowerPAK ChipFET Single
8
0.025 at V
0.042 at V
7
D
6
D
r
DS(on)
D
5
Bottom View
D
GS
GS
S
D
(Ω)
J
= - 4.5 V
= - 2.5 V
1
= 150 °C)
b, f
D
2
S
P-Channel 20-V (D-S) MOSFET
3
G
4
I
- 12
- 12
D
(A)
Steady State
a
a
t ≤ 5 sec
d, e
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
14 nC
g
(Typ)
New Product
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
Marking Code
FEATURES
APPLICATIONS
stg
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, Battery Switch, PA Switch and Charger
BE
ChipFET
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm profile
Switch
XXX
Part #
Code
Typical
34
®
3
Lot Traceability
and Date Code
Package
®
Power MOSFET
- 55 to 150
- 8.8
- 7.1
- 2.6
3.1
Limit
- 12
- 12
± 12
- 20
- 30
- 12
2
260
31
20
G
b, c
b, c
b, c
b, c
b, c
a
a
P-Channel MOSFET
Maximum
40
Vishay Siliconix
4
S
D
®
Si5485DU
www.vishay.com
°C/W
Unit
RoHS
Unit
COMPLIANT
°C
W
V
A
1

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SI5485DU Summary of contents

Page 1

... Bottom View Ordering Information: Si5485DU-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5485DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 3.0 1800 1500 1200 900 600 300 1.6 1 1.2 1.0 0.8 0 Si5485DU Vishay Siliconix T = 125 ° ° °C C 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss – Drain-to-Source Voltage (V) ...

Page 4

... Si5485DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.4 1.3 1 250 µA D 1.1 1.0 0.9 0.8 0 – Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 75 100 125 ...

Page 5

... Document Number: 73779 S-70655-Rev. B, 09-Apr-07 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- Si5485DU Vishay Siliconix 100 125 T – Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si5485DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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